将纳米技术应用于光纤技术,通过改进的化学气相沉积法(MCVD),制成了一种新型的掺半导体纳米InP微粒的新结构光纤。经测试,该光纤中掺杂InP质量分数约为0.1%,且具有良好的波导通光性能。根据扫描电镜(SEM)下观察到的光纤截面微结构形貌,通过有限元法(FEM)进行数值分析,得到该光纤的有效截面面积约为10.01μm^2,从而进一步得到该光纤的非线性系数约为10.53W^-1·km^-1证实了此种光纤较普通光纤具有较高的非线性。
By combining the nano-technology with the fiber technology, a novel optical fiber doped with InP semiconductor nano-particles was fabricated by using the modified chemical vapor deposition (MCVD) method. Through experiment, the mass fraction of InP in fiber is approximately 0.1%, and the fiber has an excellent waveguide characteristic. By using the scanning electron microscope (SEM), a stereo-scan photograph of the fiber was got, and based on the graph, the effective core area Aeff ≈10.01 μm^2 was calculated by using the finite element method (FEM). So the nonlinear coefficient of the fiber γ =10.53 W^- 1 · km^ -1 was got. The results show that this novel optical fiber has a higher nonlinear coefficient than the normal fibers.