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中文摘要：
采用光学发射光谱（OES）原位检测技术,对等离子体刻蚀机中的等离子体状态进行实时监控,讨论了其在故障诊断、分类、刻蚀终点的判断及控制方面的应用。实验平台为在新研发的高密度等离子体刻蚀机,采用化学气体HBr/Cl2为刻蚀气体进行多晶硅刻蚀工艺实验,实验过程中所采集的OES数据通过PCA法进行分析,得到与刻蚀过程相关的特征谱线。实验结果表明：OES技术适合于深亚微米等离子体刻蚀工艺过程的终点检测及故障诊断。最后就OES技术未来发展面临的挑战进行了讨论。
英文摘要：
Optical emission spectroscopy （OES）, a in situ diagnostic technique, can be used to monitor the state of the plasma in real time. The applications of OES both for fault diagnostics and endpoint detection for ICP silicon plasma etching process were investigated. Based on newly developed high density plasma etcher, poly silicon etching process with etching chemistry HBr/C12, the OES data from the plasma etching process wasanalyzed with PCA method, and the chacracteric OES lines which related with the plasma etching were obtained. The challenge of OES technique in the future was also discussed. The results show that the OES technique is a suitable tool for fault diagnostics and endpoint detection in deep sub-micrometer etching process.
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