中文摘要：

利用纳米压痕技术对沉积在Si衬底上1μm厚Cu膜的硬度H和弹性模量E进行了测量.结果表明,由单一刚度测量（SSM）和连续刚度测量（CSM）2种方法测得的E值基本一致.然而由于Cu膜的室温蠕变行为显著,用SSM方法测得薄膜的H值显著小于用CSM方法测得的H值.对加载曲线进行分析表明,在压入深度为528—587 nm时薄膜硬度显示基体效应,压入深度与薄膜厚度的比值与有限元计算结果吻合较好.

英文摘要：

Hardness（H） and elastic modulus（E） of 1μm thick Cu film deposited on Si substrate were measured by means of nanoindentation technique.The E value of Cu film obtained by using single stiffness measurement（SSM） is consistent with that obtained from continuous stiffness measurement （CSM）.However,the H value obtained from SSM is much smaller than that from CSM because of occurrence of significant creep during the holding period at ambient temperature.The analysis of loading curves shows that the substrate effect on hardness measurement appears as the indentation depth is about 528—587 nm,indicating the ratio of penetration depth to film thickness（about 0.5） is consistent with the finite element calculation.