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Biaxial and uniaxial strain effects on the ultraviolet emission efficiencies of AlxGa1-xN films with
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：2010.11.11
  • 页码：103107-103107
  • 相关项目：高Al组分AlGaN宽禁带半导体量子结构及其光探测器件的基础研究
作者： Fu, D. Y.|Zhang, R.|Wang, B. G.|Liu, B.|Xie, Z. L.|Xiu, X. Q.|Lu, H.|Zheng, Y. D.|Edwards, G.|
同期刊论文项目
高Al组分AlGaN宽禁带半导体量子结构及其光探测器件的基础研究
期刊论文 79
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