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Diode-Pumped Passively Q-Switched and Mode-Locked Nd:LuVO4 Laser with a GaAs Wafer
  • ISSN号：0021-4922
  • 期刊名称：Japanese Journal of Applied Physics
  • 时间：0
  • 页码：1651-1655
  • 语言：英文
  • 相关项目：基于分子模拟技术的半导体可饱和吸收体调Q微观机理研究及其优化设计
作者： Ge, Haibo|Yu, Zhenggang|Zhang, Gang|Yang, Kejian|Li, Yufei|Li, Dechun|Li, Ming|Li, Guiqiu|Zhao, Shengzhi|Cheng, Kang|
同期刊论文项目
基于分子模拟技术的半导体可饱和吸收体调Q微观机理研究及其优化设计
期刊论文 55 会议论文 2
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