中文摘要：

<正>This paper proposed a discrete operation mode for a punchthrough（PT） phototransistor,which is suitable for low power application,since the bias current is only necessary during the read-out phase.Moreover,simulation results show that with the new operation mode,the photocurrent is much larger than that of continuous operation mode.An ultra-high responsivity of 2×107A/W at 10-9 W/cm2 is obtained with a small detector size of 1μm2.In CMOS image sensor applications,with an integration time of 10 ms,a normalized pixel responsivity of 220 V·m2/W·s·μm2 is obtained without any auxiliary amplifier.

英文摘要：

This paper proposed a discrete operation mode for a punchthrough（PT） phototransistor,which is suitable for low power application,since the bias current is only necessary during the read-out phase.Moreover,simulation results show that with the new operation mode,the photocurrent is much larger than that of continuous operation mode.An ultra-high responsivity of 2×10~7A/W at 10~（-9） W/cm~2 is obtained with a small detector size of 1μm~2.In CMOS image sensor applications,with an integration time of 10 ms,a normalized pixel responsivity of 220 V·m~2/W·s·μm~2 is obtained without any auxiliary amplifier.