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Modulation of electrical and optical properties of gallium-doped ZnO films by radio frequency magnet
ISSN号:1674-1056
期刊名称:Chinese Physics B
时间:2012.6.6
页码:067306-
相关项目:日盲紫外探测材料铍锌氧薄膜的外延生长与器件研制
作者:
Liang Shuang|Mei Zeng-Xia|Du Xiao-Long|
同期刊论文项目
日盲紫外探测材料铍锌氧薄膜的外延生长与器件研制
期刊论文 20
专利 4
同项目期刊论文
Polarity-manipulation based on nano-scale structural transformation on strained 2D MgO
Growth of single-phase Mg0.3Zn0.7O films suitable for solar-blind optical devices on RS-MgO substrat
Mg(0.55)Zn(0.45)O solar-blind ultraviolet detector with high photoresponse performance and large int
Growth of single-crystalline Cu2O (111) film on ultrathin MgO modified alpha-Al2O3 (0001) substrate
Temperature dependence of Cu2O orientations in the oxidation of Cu (111)/ZnO (0001) by oxygen plasma
Nanostructure Formation and Passivation of Large-Area Black Silicon for Solar Cell Applications
Oxygen polarity and interfacial atomic arrangement in an MgxZn1-xO/C-MgO/sapphire heterostructure
Selective nano-emitter fabricated by silver assisted chemical etch-back for multicrystalline solar c
Broadband antireflection on the silicon surface realized by Ag nanoparticle-patterned black silicon
Dual-band MgZnO ultraviolet photodetector integrated with Si
Realization of W–MgZnO epitaxial growth on BeO-buffered ZnO for UV-B photodetectors
Sb complexes and Zn interstitials in Sb-implanted ZnO epitaxial films
Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet
Comparative study of n-MgZnO/p-Si ultraviolet-B photodetector performance with different device stru
Annealing Effects of Ti/Au Contact on N-MgZnO/P-Si Ultraviolet-B Photodetectors
Engineering of optically defect free Cu2O enabling exciton luminescence at room temperature
Thermally induced surface instability in ion-implanted MgxZn1-xO films
Sb complexes and Zn interstitials in Sb-implanted ZnO epitaxial films
Temperature dependence of Cu20 orientations in the oxidation of Cu (111)/ZnO (0001) by oxygen plasma
期刊信息
《中国物理B:英文版》
中国科技核心期刊
主管单位:中国科学院
主办单位:中国物理学会和中国科学院物理研究所
主编:欧阳钟灿
地址:北京 中关村 中国科学院物理研究所内
邮编:100080
邮箱:
电话:010-82649026 82649519
国际标准刊号:ISSN:1674-1056
国内统一刊号:ISSN:11-5639/O4
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被引量:406