中文摘要：

利用简单的化学气相沉积方法，首先在n-Si衬底上生长Sb掺杂p-ZnO薄膜，并在此基础上制作了P—ZnO／n—Si异质结发光二极管．对制备的Sb掺杂ZnO薄膜在800℃下进行了热退火处理，发现退火后样品的晶体质量和表面形貌都得到明显提高，并且薄膜呈现的电导类型为p型，载流子浓度为9．56×10^17cm^-3．此外，该器件还表现出良好的整流特性，正向开启电压为4．0V反向击穿电压为9．5v在正向45mA的注入电流条件下，器件实现了室温下的电致发光．这说明较高质量的ZnO薄膜也可以通过简单的化学气相沉积方法来实现，这为ZnO基光电器件的材料制备提供了一种简单可行的方法．

英文摘要：

The Sb-doped ZnO film/n-Si heterojunction is synthesized by simple chemical vapor deposition method. The quality of crystal and surface morphology of Sb-doped ZnO film are improved after annealing at 800℃, which exhibits effective p-type conductivity with a hole concentration of 9.56 × 10^17 cm-3. The properties of the p-ZnO/n-Si heterojunction photoelectric device are investigated. The resuets show that this device has good rectifier characteristics with a positive open electric of 4.0 V, and a reverse breakdown voltage of 9.5 V. The electroluminescent is realized at room temperature under the condition of forward current 45 mA. These results also confirm that the high-quality ZnO film can be prepared by the simple chemical vapor deposition method, which opens the way for simple preparation of materials applied to ZnO based opto-electronic device.