中文摘要：

以金属钛为靶材、O2/N2/Ar混合气氛为溅射气体，在导电玻璃（ITO）表面磁控溅射一层薄膜，再经300—500℃退火处理制备了氮掺杂TiO2薄膜．采用X射线衍射（XRD）、X光电子能谱（XPS）、扫描电子显微镜（SEM）和紫外．可见吸收光谱等对薄膜的微观结构、光学特性和光电化学性能等进行了研究．进而采用化学沉积的方法在TiO2-xNx薄膜表面沉积上一层多孔NiO薄膜，研究表明，制备的ITO／TiO2-xNx／NiO双层薄膜具有明显的光电致色特性，400℃退火处理的氮掺杂TiO。薄膜具有最高的光电流响应，经氙灯照射1h后，薄膜从无色变成棕色，500nm波长处光透过率从79．0％下降至12．6％．

英文摘要：

N-doped TiO2 films were prepared on indium tin oxide（ITO） conducting glass by dc-reactive magnetron sputtering using a Ti target in an O2/N2/Ar mixture gas in combination with heat-treatment at 300-500 ℃. The microstructure, optical and photoelectrochemical properties of the as-formed films were characterized by X-ray diffraction （XRD）, X-ray photoelectron spectroscopy（XPS）, scanning electron microscopy（SEM） and UV-Vis transmittance spectrum. Highly porous NiO was deposited onto the N-doped TiO2 layer by chemical bath deposition to obtain/TO/ TiO2-xNx/NiO bilayer thin films and they exhibited excellent and noticeable photoelectrochrornism. The TiO2-xNx film annealed at 400 ℃ showed the highest photocurrent response. The color of films changed from colorless to brown and the transmittance varied from 79.0% to 12.6% at 500 nm after 1 h of irradiation.