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中文摘要：
采用纳米二氧化硅（SiO2）作空间稳定剂，通过苯胺的原位分散聚合在玻璃表面直接制备PANI-SiO2透明导电纳米复合膜。薄膜的表观形态和组成通过扫描电镜（SEM）、红外光谱分析（FTIR）、紫外可见光谱分析（UV-Vis）进行了表征。结果发现，薄膜的形成经历了成核、生长、生长饱和3个明显的过程，薄膜表面光滑致密，膜厚在3～300nm；SiO2对薄膜表面质量有良好改善作用，对薄膜的导电率稍有影响。此外对成膜机理进行了讨论。
英文摘要：
Conducting and transparent nanometer PANI-SiO2 films were prepared via insitu dispersion polymerization of aniline on glass surfaces, using nanometer silicon dioxide as stabilizer. The film morphology and composition were characterized by FTIR, UV-Vis, and SEM. The results show that the growth of PANI-SiO2 films undergoes three stages： adsorption nucleation, growth and growth saturation. Dense and smooth films with thickness in the range of 3-300 nm exhibit a distinct improvement on the surface quality of the films. The presence of SiO2 in the film shows only a slight influence on the electrical conductivity of PA- NI-SiO2 films composite. The formation mechanism of the PANI-SiO2composite films is also discussed.
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