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中文摘要：
用坩埚下降法（Bridgman）生长出了Bi离子掺杂的CdWO。单晶．测定了晶体不同部位的吸收光谱、发射光谱和X射线电子能谱（XPS）．Bi离子的掺人引起CdWO。晶体的吸收边从345nm红移到399nm．在311nm，373nm，808nm和980nm光的激发下，分别观测到中心波长为470nm，528nm，1078nm和较弱的1504nm四个不同发射带．Bi：CdWO4单晶的XPS谱分别与Bi2O3（Bi^3＋）和NaBiO3（Bi^5＋）样品的进行比较，推断Bi^3＋和BP离子同时存在于CdWO4晶体中．可见光波段的470nm与528nm荧光发射起因于CdWO4晶体基质中WO^6-6一与掺杂于晶格中Bi^3＋离子的发光；而1078nm的发射峰则起因于Bi^5＋离子的发光．XPS的分析结果与荧光强度的变化一致，沿着晶体生长方向，1078nm的荧光强度逐步变弱，Bi^5＋离子的含量逐步减少；而位于528nm处的荧光强度则逐步增强，Bi^3＋离子的含量逐步增多．
英文摘要：
The bismuth-doped CdWO4 single crystals are prepared by the Bridgman method. The absorption spectra, emission spectra and X-Ray photoelectron spectroscopy （XPS） of various parts of as-grown Bi： CdWO4crystal are investigated. The absorption edge of CdWO4 crystal is red-shifted from 345nm to 399nm due to the introdution of Bi into crystal. The four emission peaks at 470, 528, and 1078 and a weak peak at 1504 nm are observed under the excitation of light beams at 311, 373, 808, and 980 nm. From the X-Ray photoelectron spectroscopic measurements of the Bi： CdWO4 single crystals, Bi2O3 （Bi^3＋ ） and NaBiO3 （Bi^5＋ ） samples, we infer that there coexit Bi^3＋. and Bi^5＋ in Bi： CdWO4 crystals. The fluorescence emissions of visible bands at 470 and 528 nm result from both WO66- in Bi： CdWO4 and Bi^3＋ ions doped in the lattice, while the fluorescence emission of the near infrared band at 1078 nm is due to the Bi^5＋ luminescence. The analysis result of XPS is consistent with the change of the fluorescence intensity： along the growing direction the emission intensity at 1078 nm and the content of Bi^5＋. ion both decrease gradually, while the intensity at 528 nm and the number of Bi^3＋ both increase gradually.
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