中文摘要：

采用偏置靶材离子束沉积工艺，在相同的沉积参数条件下，在硅、玻璃以及蓝宝石三种不同的衬底上分别制备了相同厚度的纯硅和纯锗薄膜。利用原子力显微镜，研究了两种非晶薄膜在不同衬底上的二维、三维表面形貌和表面粗糙度。结果表明：纯锗薄膜具有较大的均方根粗糙度，均达到了8 nm以上，其中沉积在硅衬底上的纯锗薄膜的均方根粗糙度最大，达到了11.16 nm；而纯硅薄膜的均方根粗糙度较小，均在3 nm以下，其中沉积在硅衬底上的纯硅薄膜的均方根粗糙度最小，仅有0.47 nm。

英文摘要：

Both of pure silicon （Si） and germanium （Ge） thin films were prepared on three different substrates, including silicon, glass and sapphire, by biased target ion beam deposition （ BTIBD） method with same deposition parameters and a nominal thickness. Atomic force microscopy （AFM） was used to measure the two dimensional surface topography, three dimensional surface topography and surface roughness of Si and Ge thin films deposited on different substrates. The results indicate that pure Ge thin films present a ralatively larger root mean square （RMS） roughness, which is larger than 8 nm and the largest value is 11.16 nm in the case of silicon substrate. However, the pure Si thin films reveal a relatively smaller RMS roughness, which is less than 3 nm and the smallest value is only 0.47 nm in the case of silicon substrate.