中文摘要：

采用简单的磁控溅射方法,在室温合成了CdS多晶薄膜.在溅射CdS多晶薄膜过程中,分别在Ar气中通入0%、0.88%、1.78%、2.58%和3.40%（体积分数,φ）的O2,得到不同O含量的CdS多晶薄膜.通过X射线衍射仪、拉曼光谱仪、扫描电子显微镜、X射线光电子能谱仪、紫外-可见光谱仪对得到的CdS多晶薄膜进行表征.分析结果表明：O的掺入能得到结合更加致密,晶粒尺寸更小的CdS多晶薄膜；与溅射气体中没有O2时制备的CdS多晶薄膜的光学带隙（2.48 eV）相比,当溅射气体中O2的含量为0.88%和1.78%（φ）时,制备得到的CdS多晶薄膜具有更大的光学带隙,分别为2.60和2.65 eV；而当溅射气体中O2的含量为2.58%和3.40%（φ）时,得到的CdS光学带隙分别为2.50和2.49 eV,与没有掺杂O的CdS的光学带隙（2.48 eV）相当；当溅射气体中O2的含量为0.88%（φ）时,制备的CdS多晶薄膜具有最好的结晶质量.通过磁控溅射方法,在溅射气体中O2含量为0.88%（φ）条件下制备的CdS多晶薄膜表面沉积了CdTe多晶薄膜并在CdCl2气氛中进行了高温退火处理,对退火前后的CdTe多晶薄膜进行了表征.表征结果显示：CdS中掺入O能得到结合更紧密、退火后晶粒尺寸更大的CdTe多晶薄膜.通过磁控溅射方法,在CdS制备过程中于Ar中掺入O2,在室温就能得到具有更大光学带隙的CdS多晶薄膜,该方法是一种简单和有效的方法,非常适用于大规模工业化生产.

英文摘要：

We report the synthesis of CdS polycrystal ine thin films deposited with 0%, 0.88%, 1.78%, 2.58%, and 3.40%（volume fraction,φ） O2 in sputtering Ar gas using a radio frequency magnetron sputtering method. The obtained CdS samples were characterized by X-ray diffraction, scanning electron microscope, Raman＆amp;nbsp;spectroscopy, ultraviolet-visible （UV-Vis） absorption spectroscopy, and X-ray photoelectron spectroscopy. O incorporation led to the formation of compact and smal CdS grains. The band gap values of the CdS thin films deposited with 0.88%and 1.78%O2 were 2.60 and 2.65 eV, respectively, and were larger than that of CdS （2.48 eV） deposited without O2 gas in sputtering Ar gas. In contrast, the band gap values of the CdS thin films deposited with 2.58%and 3.40%O2 （2.50 and 2.49 eV, respectively） were consistent with that of CdS （2.48 eV） deposited without O2 gas in sputtering Ar＋O2 gas. The CdS thin film deposited with 0.88%O2 displayed the highest crystal ine quality. Subsequently, CdTe thin films were deposited by radio frequency magnetron sputtering method on the surface of the CdS thin films. The CdTe thin films were characterized before and after high-temperature anneal treatment in a CdCl2 atmosphere. The results showed that O incorporation into CdS led to the formation of considerably more closely packed and larger CdTe grains. The synthesis of CdS with large band gap values at room temperature is facile and effective using the current method. Therefore, the method presented herein is very promising for large-scale industrial production.