欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
系统研究了低温成核层生长时间、高温生长时的V/I I比以及生长温度对氢化物气相外延生长GaN膜晶体质量的影响.研究发现合适的低温成核层为后续高温生长提供成核中心,并能有效降低外延膜与衬底间的界面自由能,促进成核岛的横向生长；优化的V/II比和最佳生长温度有利于降低晶体缺陷密度,促进横向生长,增强外延膜的二维生长.利用扫描电子显微镜、原子力显微镜、高分辨X射线衍射、低温光致发光谱和室温拉曼光谱对优化条件下生长的GaN外延膜进行了结构和光电特性表征.测试结果表明,膜表面平整光滑,呈现二维生长模式表面形貌；（002）和（102）面摇摆曲线半高宽分别为317和343 arcsec；低温光致发光谱中近带边发射峰为3.478 eV附近的中性施主束缚激子发射峰,存在11 meV的蓝移,半高宽为10 meV,并且黄带发光强度很弱；常温拉曼光谱中E2（high）峰发生1.1 cm？1蓝移.结果表明,优化条件下生长的GaN外延膜具有良好的晶体质量和光电特性,但GaN膜中存在压应力.
英文摘要：
In this paper, the processing parameters of growing GaN epilayer by hydride vapor phase epitaxy are optimized. The influences of the low-temperature （LT） nucleation layer growth time, V/II precursor ratio and the growth temperature on GaN layer are investigated by the high-resolution X-ray diffraction （HRXRD） signature for the asymmetric and symmetric reflections. The investigation finds that the LT-nucleation layer not only supplies the nucleation centers having good crystal quality, but also promotes the lateral growth of the sequent high temperature （HT） growth. The optimal LT nucleation layer growth time, V/II precursor ratio and the growth temperature can effectively enhance lateral growth to reduce the crystal defects and are favorable to converting the growth mechanism from three-dimension to two-dimension in HT growth. The structural and optoelectronic properties of the as-grown GaN layer with a thickness of 15 μm at the optimal parameters are studied by scanning electron microcopy, atomic force microscopy （AFM）, HRXRD, Raman spectra, and photoluminescence （PL） measurements. X-ray rocking curves show that the full widths at half maximum of （002） and （102） are 317 and 343 arcsec, respectively. The surface roughness （rms： root mean square） is 0.334 nm detected using AFM . These characteristics show that the sample has good lattice quality and smooth surface morphology. In PL spectrum, the near band edge emission is dominated by emission from excitons bound to neutral donors （D0X） near 3.478 eV with 11 meV blue-shift and the yellow band emission is very weak. The results indicate that the GaN layer has good crystal quality and excellent optoelectronic properties, but a little biaxial in-plane compressive strain also exists in it due to the lattice and thermal mismatch.
同期刊论文项目
同项目期刊论文
Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nan
Bloch surface plasmon enhanced blue emission from InGaN/GaN light-emitting diode structures with Al-
Study of Rashba spin splitting and intersubband spin-orbit coupling effect in AlGaN/GaN quantum well
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100)
The growth and properties of m-plane InN epilayer on LiAlO2(100) by metal-organic chemical vapor dep
Ultraviolet emission efficiencies of Al(x)Ga(1-x)N films pseudomorphically grown on Al(y)Ga(1-y)N te
Influence of biaxial strain on near-band-edge optical properties of c- and a-plane wurtzite-InN film
AlGaN-based 330 nm resonant-cavity-enhanced p-i-n junction ultraviolet photodetectors using AlN/AlGa
The parameters in the band-anticrossing model for In (x) Ga1-x N (y) P1-y before and after annealing
Effectr of the V/III ratio during buffer layer growth on the yellow and blue luminescence in undoped
Temperature dependence of the point defect properties of GaN thin films studied by terahertz time do
Large-scale fabrication and luminescence properties of GaN nanostructures by a soft UV-curing nanoim
Investigation of surface plasmon coupling with the quantum well for reducing efficiency droop in GaN
A Band-Gap Energy Model of the Quaternary Alloy In_xGa_yAl_(1-x-y)N using Modified Simplified Cohere
Impact of anisotropic strains on low-frequency dielectric properties and room-temperature polar phas
The Research on GaN Based Multiple Quantum Well LEDs withNanopillar Arrays for EnhancingLight-emitti
A modified simplified coherent potential approximation model of band gap energy of III-V ternary all
Design and fabrication of SiO2/Si3N4 dielectric distributed Bragg reflectors for ultraviolet optoele
The parameters in the band-anticrossing model for In (x) Ga(1-x) N (y) P(1-y) before and after annea
Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiA
The growth and properties of an m-plane InN epilayer on LiAlO2 (100) by metal-organic chemical vapor
Structural and optical properties of ZnO thin films deposited by electron beam evaporation with diff
The evolution behavior of structures and photoluminescence of K-doped ZnO thin films under different
期刊信息
位置：