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Temperature dependence of the point defect properties of GaN thin films studied by terahertz time do
  • ISSN号：1869-1927
  • 期刊名称：Science China Physics, Mechanics and Astronomy
  • 时间：2013.11.11
  • 页码：2059-2064
  • 相关项目：宽禁带半导体极化诱导能带调控原理及器件应用
作者： H.N.Fang|R.Zhang|B.Liu|Y.C.Li|D.Y.Fu|Y.Li|Z.L.Xie et.al.|
同期刊论文项目
宽禁带半导体极化诱导能带调控原理及器件应用
期刊论文 95 会议论文 29 专利 6
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