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Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx
  • ISSN号：0957-4522
  • 期刊名称：Journal of Materials Science: Materials in Electro
  • 时间：2013.8.8
  • 页码：2923-2927
  • 相关项目：电注入下ZnO激子产生与复合发光机理研究
作者： Song, Shiwei|Liu, Yang|Liang, Hongwei|Yang, Dechao|Zhang, Kexiong|Xia, Xiaochuan|Shen, Rensheng|Du, Guotong|
同期刊论文项目
电注入下ZnO激子产生与复合发光机理研究
期刊论文 24
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