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Wavelength extended InGaAs/InAlAs/InP photodetectors using n-on-p configuration optimized for back i
  • ISSN号：1350-4495
  • 期刊名称：Infrared Physics & Technology
  • 时间：0
  • 页码：52-56
  • 语言：英文
  • 相关项目：采用非矩形量子阱的磷化铟基波长扩展激光器
作者： Yonggang Zhang, Yi Gu, Zhaobing Tian, Aizhen Li|
同期刊论文项目
采用非矩形量子阱的磷化铟基波长扩展激光器
期刊论文 15 专利 4
同项目期刊论文
Distinction investigation of InGaAs photodetectors cutoff at 2.9 μ m
InP-based InGaAs/InAlGaAs digital alloy quantum well laser structure at 2 μ m
Characteristics of InP-based InGaAs photodetector structures with lattice mismatch up to 2.6% on InA
异质界面数字递变超晶格对扩展波长 InGaAs 光电探测器性能的改善
基于半导体激光器的光声光谱气体检测及其进展
双异质结扩展波长 InGaAs PIN 光电探测器暗电流研究
AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam
Performance of gas source MBE grown wavelength extended InGaAs photodetectors with different buffer
Structural and photoluminescence properties of highly strain-compensated InAlAs/InGaAs superlattice
中红外半导体光源和探测器件及其应用
双异质结扩展波长InGaAs PIN光电探测器暗电流研究
InP-based InGaAs/InA1GaAs digital alloy quantum well laser structure at 2μm
晶格失配度达2.6%的波长扩展InGaAs/InP光电探测器结构
异质界面数字梯度超晶格对扩展波长InGaAs光电探测器性能的改善