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InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers
  • ISSN号：1931-7573
  • 期刊名称：Nanoscale Research Letters
  • 时间：2012.11.11
  • 页码：-
  • 相关项目：无浸润层的氮化铟镓量子点生长机理和物性研究
作者： Lv, Wenbin|Wang, Lai|Wang, Jiaxing|Hao, Zhibiao|Luo, Yi|
同期刊论文项目
无浸润层的氮化铟镓量子点生长机理和物性研究
期刊论文 42 会议论文 2
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