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基于Ⅲ-Ⅴ与Ⅱ-Ⅵ族半导体材料色散特性的高灵敏度慢光干涉仪
  • ISSN号：1000-3290
  • 期刊名称：《物理学报》
  • 时间：0
  • 分类：TN304[电子电信—物理电子学]
  • 作者机构：[1]哈尔滨工业大学可调谐激光技术国家级重点实验室光电子技术研究所,哈尔滨150080
  • 相关基金：国家高技术研究发展计划（批准号：2007AA12Z112）; 国家自然科学基金（批准号：60878006）资助的课题
作者： 蔡元学[1], 掌蕴东[1], 党博石[1], 吴昊[1], 王金芳[1], 袁萍[1]
关键词： 干涉仪, 非线性光学, Ⅲ-Ⅴ与Ⅱ-Ⅵ族半导体材料, interferometers, nonlinear optics, Ⅲ-Ⅴ and Ⅱ-Ⅵ semiconductors
中文摘要：

分析了Ⅲ-Ⅴ与Ⅱ-Ⅵ族半导体材料的光学特性,证明半导体慢光介质不但可以提高干涉仪的光谱灵敏度,而且可以获得远大于气体慢光介质的工作光谱范围.实验证明,基于慢光介质GaAs的干涉仪光谱灵敏度相对于传统的干涉仪提高约3.2倍.

英文摘要：

We investigate the optical properties of Ⅲ-Ⅴ and Ⅱ-Ⅵ semiconductors.The results show that the sensitivity of the interferometer can be greatly enhanced by the dispersive property of semiconductor.Furthermore,the analyses show that the semiconductor slow light medium has a more wider working spectral range than gas slow light medium.Moreover,we experimentally demonstrate that the sensitivity of the interferometer based on the semiconductor GaAs is 3.2 times higher than those of traditional interferometers.

同期刊论文项目
基于光速减慢的新型光谱型干涉仪技术研究
期刊论文 42 会议论文 11 获奖 4
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期刊信息
  • 《物理学报》
  • 北大核心期刊（2011版）
  • 主管单位:中国科学院
  • 主办单位:中国物理学会 中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京603信箱(中国科学院物理研究所)
  • 邮编：100190
  • 邮箱：apsoffice@iphy.ac.cn
  • 电话：010-82649026
  • 国际标准刊号：ISSN：1000-3290
  • 国内统一刊号：ISSN：11-1958/O4
  • 邮发代号:2-425
  • 获奖情况:
  • 1999年首届国家期刊奖,2000年中科院优秀期刊特等奖,2001年科技期刊最高方阵队双高期刊居中国期刊第12位
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  • 美国化学文摘（网络版）,荷兰文摘与引文数据库,美国工程索引,美国科学引文索引（扩展库）,英国科学文摘数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,中国北大核心期刊（2011版）,中国北大核心期刊（2014版）,中国北大核心期刊（2000版）
  • 被引量:49876