中文摘要：

提出了一种利用多晶硅电阻的温度系数补偿负温度系数电压实现低温度系数的带隙基准电路，并且引入由二分频时钟控制的CMOS开关，使产生的失调电压正负交替做周期性变化相互抵消。采用BiCMOSO．35μm工艺设计。仿真结果表明，此方法能够使MOS管在失配10％的情况下降低97％的失配，温度系数可达5．2ppm／℃。工作电压为1．5V～3．3V、工作温度为-40℃～＋70℃且工作在1．8V常温下时，电路的工作电压为1．1443V，总电流为29．13μA，低频处的电源抑制比为-70dB。

英文摘要：

A design of low temperature coefficient bandgap reference circuit. Use negative temperature coefficient resistor for high-temperature coefficient compensation to reduce the temperature coefficient. Join in CMOS switch controlled by two sub-frequency clock ,to compensate the error caused by the mismatch of the MOSFET. When designed by BiCMOS 0.35 μm technology, emulate result show that this method can reduce 97% mismatch when the MOSFET＇s mismatch reach to 10%. The temperature coefficient reach to 5.2 ppm/℃. The supply voltage is 1.5 V-3.3 V, the temperature range is -40 ℃～＋70 ℃. When work at 1.8 V supply voltage at normal temperature, the reference voltage is 1.144 3 V, total current is 29.13 μA, PSRR at low frequency is -70 dB.