采用SEM、EDS、XRD分析了SiB4微粉化学气相渗透(CVI)SiC后的组成和结构,并用热力学计算研究了SiB4微粉在CVI SiC过程中变化的原因。结果表明:在CVI SiC过程中SiB4微粉不发生分解,但在近表层处氧化生成SiO2和B2O3。用SiB4浆料浸渍结合CVI工艺对C/SiC基体进行自愈合改性时,难以形成均匀致密的基体。
The phase composition and microstructure of SiB4 powder during the process chemical vapor infiltration(CVI) of SiC were analyzed by EDS,SEM,XRD.Thermodynamic calculation was carried out in order to investigate the changes of SiB4 powder.The results show that the SiB4 particles do not decompose during CVI SiC process,but they are oxidized to form SiO2 and B2O3 near the external surface of the specimen.Therefore,the matrix of C/SiC composite modified by SiB4 particles,by using CVI combining with slurry infiltration processes,is not homogeneous and compact.The uneven oxidation makes it difficult to study the oxidation mechanism of C/SiC-SiB4 composite.