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中文摘要：
采用分子束外延技术在GaAs（110）衬底上制备了一系列生长温度和As2/Ga束流等效压强比不同的样品,通过室温光致发光谱、高分辨X射线衍射仪和低温光致发光谱对这些样品进行了分析,找到了在GaAs（110）衬底上生长高质量高Al组分的Al0.4Ga0.6As生长条件.
英文摘要：
A series of samples with different growth temperatures and different BEP ratios were grown on GaAs （110） substrates by molecular beam epitaxy. The samples were investigated via room temperature and low temperature photoluminescence spectra and high resolution X-ray diffraction. Then the optimized growth conditions of A104 Ga0.6 As films on GaAs （110） substrates were found.
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