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Interlayer coupling in anisotropic/isotropic van der Waals heterostructures of ReS2 and MoS2 monolayers
  • 时间:0
  • 分类:O414[理学—理论物理;理学—物理] TN304.2[电子电信—物理电子学]
  • 作者机构:[1]College of Chemistry and Materials Engineering, Wenzhou University, Zhejiang Key Laboratory of Carbon Materials, Wenzhou 325035, China, [2]Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
  • 相关基金:This work was supported by the National Natural Science Foundation of China (Nos. 61471270, 51420105002, and 51572199).
中文摘要:

在里面飞机对称是到二维的分层的材料,以及原子地薄的异质接面的物理性质的一个重要贡献者。这里,在夹层联合相互作用和费用分离被观察由的地方,我们表明物件 2 和瞬间 2 单层的各向异性 / 各向同性的货车 der Waals (vdW ) heterostructures 在 situ Raman 光致发光光谱学,电,并且 photoelectrical 大小。我们相信这些结果能对理解原子地薄的 vdW heterostructures 的基本物理并且创造电子的小说和 optoelectronic 设备有用。

英文摘要:

In-plane symmetry is an important contributor to the physical properties of two-dimensional layered materials, as well as atomically thin heterojunctions. Here, we demonstrate anisotropic/isotropic van der Waals (vdW) heterostructures of ReS2 and MoS2 monolayers, where interlayer coupling interactions and charge separation were observed by in situ Raman-photoluminescence spectroscopy, electrical, and photoelectrical measurements. We believe that these results could be helpful for understanding the fundamental physics of atomically thin vdW heterostructures and creating novel electronic and optoelectronic devices.

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