采用一种新的掺杂方法制备了Cu掺杂的LiV3O5,该方法设备简单,热处理温度较低.电化学性能测试表明,Cu掺杂和水处理可以使层间距变大,电导率提高,从而促进Li^+离子的扩散,使Li^+的嵌脱变得容易,改善了掺杂材料的充放电循环性能.其中掺杂量为0.05的样品首次放电容量为265.0mAh/g,100周后为227.7mAh/g,容量损失仅为14%.
Cu-doped LiV3O8 was prepared by mixing Cu powder with LiV3O8 prepared at 500℃ for 16 h. By comparison, the copper doping and water-supported structure result in larger interlayer spacing, higher electronic conductivity and faster Li^+ diffusion, which leading to Li^+ intercalation/deintercalation become easier and improve electrochemical performance of the material. Cu0.5-doped-LiV3O8 is better than the undoped one, which has initial discharge capacity of 265.0 mAh/g and kept 227.7 mAh/g after 100 cycles with only 14% decay.