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Optical properties of a HfO2/Si stack with a trace amount of nitrogen incorporation
  • ISSN号：1674-4926
  • 期刊名称：《半导体学报：英文版》
  • 时间：0
  • 分类：O484.41[理学—固体物理;理学—物理] X523[环境科学与工程—环境工程]
  • 作者机构：[1]State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China
  • 相关基金：Project supported by the National Natural Science Foundation of China（Nos.61076114 61106108）; the Shanghai Educational Develop Foundation China（No.10CG04）; the SRFDP（No.20100071120027）; the Fundamental Research Funds for the Central Universities and the S＆T Committee of Shanghai China（No.1052070420）
作者： Li Ye Jiang Tingting Sun Qingqing Wang Pengfei Ding Shijin Zhang Wei[1]
关键词： 光学性质, 氮浓度, 掺入, 薄膜沉积, 栈, 原子层沉积, HFO2, 过氧化氢, atomic layer deposition, HfO2, rapid thermal annealing, optical property
中文摘要：

Corresponding author. Email： qqsun@fudan.edu.cn

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期刊信息
  • 《半导体学报：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编：李树深
  • 地址：北京912信箱
  • 邮编：100083
  • 邮箱：cjs@semi.ac.cn
  • 电话：010-82304277
  • 国际标准刊号：ISSN：1674-4926
  • 国内统一刊号：ISSN：11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
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  • 被引量:7754