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中文摘要：
为实现垂直腔面发射半导体激光器（VCSEL）大功率窄线宽输出,设计了浅面浮雕矩形台面结构的垂直腔面发射激光器（SR VCSEL）。电流密度分布会影响模式的分布,模拟结果表明,矩形台面VCSEL相比于圆形台面VCSEL,在有源区面积增大的情况下,电流密度分布不变。在矩形台面VCSEL出光孔表面刻蚀浅面浮雕后,高阶模式比基模的阈值增益的变化大,基模对高阶模式的抑制增强。理论结果表明,矩形浅面浮雕结构的VCSEL能够实现对高阶模式的抑制,测试结果得到连续输出为5.87mW,光谱宽度为0.1nm,功率偏振度为10,横向模式抑制比超过30dB的窄线宽输出。
英文摘要：
In order to realize the high-power narrow linewidth of vertical cavity surface emitting laser （VCSEL）, the shallow surface relief rectangular structure （SR VCSEL） is designed. The difference of the current density distribution leads to the mode distribution different. Calculation results show that, compared with circular mesa VCSEL, the uniformity of the current density distribution of rectangular mesa VCSEL is not changed when the active area is increased. And theoretical results indicate that the threshold gain of high-order mode increases greater than that of the fundamental mode when etching shallow relief of surface. In the experiment, the power of 5.87 mW when current is continuous, spectral width of 0.1 nm, power polarization degree of 10, and transverse mode suppression ratio more than 30 dB are obtained.
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Improved performances of 850 nm vertical cavity surface emitting lasers utilizing the self-planar me
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