中文摘要：

在第三的混合晶体的体积和表面声子电磁声子的作文依赖在修改 random-element-isodisplacement 模型和 Born-Huang 近似的框架被学习。几个 II VI 和 III V 复合系统的数字结果被执行，并且是的电磁声子频率为第三的混合晶体艾尔 _x Ga _1−x 作为，差距 _x 作为 _1−x , ZnS _x Se _1−x , GaAs _x Sb _1−x , Ga _x 在 _1−x P ，和 Zn _x Cd _1−x 例子被给并且讨论的 S 。二的精力的依赖有像声子的特征的体积声子电磁声子分叉的结果表演，和第三的混合晶体的作文上的表面声子电磁声子从相应二元(物) 系的那些非线性、不同。

英文摘要：

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.