中文摘要：

在低温HVPE-GaN/c-Al2O3模板上射频溅射ZnO作为缓冲层,采用氢化物气相外延（HVPE,hydridevapoarphaseepitaxy）法外延生长了高质量的GaN320μm厚膜。用高分辨率双晶X射线衍射仪（DCXRD）、原子力显微镜（AFM）和扫描电子显微镜（SEM）分析了制备的GaN厚膜特性。结果表明,GaN（0002）面的X射线摇摆曲线衍射峰半高宽（FWHM）为336.15arcsec,穿透位错密度（TDD）为107cm^-2,外延生长的GaN厚膜晶体质量较好,可以作为自支撑GaN衬底。

英文摘要：

High-quality GaN films of 320 μm thickness are deposited on low-temperature HVPE-GaN/c-Al2O3 templates by hydride vapor phase epitaxy（HVPE） with RF-ZnO as the buffer layers.The crystal properties of ZnO buffers and thick GaN films are detected by double crystal X-ray diffraction（DCXRD）,atomic force microscopy（AFM） and scanning electron microscope（SEM）.As a result,the full width at half maximum（FWHM） of GaN（0002） double crystal x-ray diffraction rocking curve is 336.15 arcsec and the threading dislocation density is 10^7cm^-2,which indicates that the thick GaN films have the high quality,and are suitable for free-standing GaN substrates.