中文摘要：

这个工作把超声的结合用于包裹扭动削射出二极管的基于陷阱的光(扭动薄片 LEDs ) 在 Si 底层上。可靠性上的超声的结合参数的效果扭动芯片基于陷阱带被调查。在后果老化测试，样品为百与 80 妈的经常的水流被驾驶在房间温度的小时。electroluminescence (EL ) 紧张变化有大关联到超声的力量，然后到结合的温度和力量，这被发现。高结合温度和超声的力量和合适的结合力量显著地改进了 EL 紧张。它被贡献一个强壮的原子内部散开的形成在结合的接口的一个稳定的关节。在变老的测试的温度变化是主要因素产生在在薄片和 Au 肿块之间的接口形成分层的一个高内部的压力。作为结果，分层延迟了从带的包装射出并且腐烂的光子它的 EL 紧张。

英文摘要：

This work applied the ultrasonic bonding to package flip chip GaN-based light emitting diodes （flip chip LEDs） on Si substrates. The effects of ultrasonic bonding parameters on the reliability of flip chip GaN-based LED were investigated. In the sequent aging tests, samples were driven with a constant current of 80 mA for hundreds hours at the room temperature. It was found that the electroluminescence （EL） intensity variation had a large correlation to the ultrasonic power, and then to the bonding temperature and force. A high bonding temperature and ultrasonic power and a proper bonding force improved the EL intensity significantly. It was contributed to a strong atom inter-diffusion forming a stable joint at the bonding interface, The temperature fluctuation in the aging test was the main factor to generate a high inner stress forming delamination at the interface between the chip and Au bump. As a result, delamination had retarded the photons to emit out of the LED packaging and decay its EL intensity.