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Improvement of Reliability Characteristics of TiO2-Based Resistive Switching Memory Device with an I
  • 期刊名称：Jpn. J. Appl. Phys
  • 时间：0
  • 页码：101101-101101
  • 相关项目：氧化物基电阻存储器电阻开关特性的离子掺杂调控研究
作者： Lifeng Liu|Di Yu|Bing Chen|Feifei Zhang|Bin Gao|Boyang Li|Dedong Han|Jinfeng Kang|Xing Zhang|
同期刊论文项目
氧化物基电阻存储器电阻开关特性的离子掺杂调控研究
期刊论文 9 会议论文 2 专利 3
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