中文摘要：

设计并合成了4个基于含硫芳杂稠环化合物的可溶性共轭齐聚物,即以3-十一烷基苯并[d,d′]噻吩并[3,2-b;4,5-b′]并二噻吩（BTTT）为末端芳香单元,噻吩（T）、二噻吩（bT）、N-十二烷基-二噻吩并[3,2-b]吡咯（TP）或2,5-双（3-十二烷基噻吩）[3,2-b]并二噻吩（qT）为中间芳香单元的共轭齐聚物.它们的HOMO能级和能隙分别处于-5.35～-4.95eV和2.62～2.44eV.通过溶液旋涂的方法制备了有序的薄膜,除T-BTTT外,其他3个化合物在薄膜中均表现出edge-on型的层状排列结构.制备了底栅-顶接触型的有机薄膜晶体管器件,qT-BTTT具有最高的场效应迁移率,达到0.012cm2/V.s.

英文摘要：

A novel S-containing heteroacene,i.e.3-undecylbenzothieno[3,2-b;4,5-b′] dithiophene（BTTT）,was synthesized.Four conjugated oligomers which comprise BTTT as the terminal units and thiophene（T）,bithiophene（bT）,N-dodecyl-dithieno[3,2-b：2′3′-d]pyrrole（TP） or 2,5-bis（3-dodecylthiophen-2-yl）thieno thiophene（qT） as the central unit,respectively,were prepared and characterized.The HOMO energy levels and optical bandgaps of the conjugated oligomers varied in the range of-5.35~-4.95 eV and 2.62~2.44 eV,respectively.Ordered films can be prepared by solution casting from all oligomers.Except for T-BTTT,bT-BTTT,TP-BTTT and qT-BTTT all showed a lamellar molecular arrangement in film.Organic thin film transistors（OTFTs） with bottom gate and top contact device structure were prepared.qT-BTTT displays the best device performance with a field-effect mobility（μFET） up to 0.012 cm2/V·s.