中文摘要：

采用磁控溅射法在硅基材料上分别制备了Cu薄膜和Cu/Ta薄膜,用X射线衍射仪（XRD）研究两种样品在不同温度热处理下的织构情况和择优取向。结果表明,加Ta薄膜的样品可显著提高Cu（111）的衍射峰强度,说明Ta薄膜层能有效增强Cu薄膜层的抗电迁移性能。加Ta层的样品在一定温度下退火后同样也能增进Cu薄膜的抗电迁移性能。

英文摘要：

Cu thin film and Cu/Ta film were sputted on silicon substrate by magnetron sputtering method.The texture coefficient and perferred orientation of two samples during different annealing temperatures were investigated by X-ray diffraction（XRD）.The results show that the sample of Cu/Ta film can significantly improve the diffraction peak intensity of Cu（111）.So Ta thin film can effectively enhance the electromigration resistance of Cu film.After annealing under certain temperature,the sample of Cu/Ta film can also improve the electromigration resistance of Cu thin film.