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两种二硼化镁超导薄膜布图布线的湿法刻蚀技术
  • ISSN号:1005-023X
  • 期刊名称:《材料导报》
  • 时间:0
  • 分类:TN705[电子电信—电路与系统]
  • 作者机构:[1]贵州大学理学院,贵阳550025, [2]贵州省微纳电子与软件技术重点实验室,贵阳550025
  • 相关基金:国家自然科学基金(51002035);贵州省科学技术基金(20092058;20112008);贵州大学自然科学青年科研基金(2009014)
中文摘要:

超导薄膜实现布图布线工艺是制备超导电子元件的必要步骤。报道了两种二硼化镁超导薄膜布图布线的湿法刻蚀技术:一种是先利用双氧水(H2O2)刻蚀前驱体硼薄膜,然后将刻蚀的样品放入钽坩埚中在镁蒸气下高温退火,实现了对超导薄膜二硼化镁(MgB2)布图布线的刻蚀;另一种是选用氢氟酸(HF)和硝酸(HNO3)的混合溶液直接在二硎化镁超导薄膜上进行图形刻蚀。通过上述两种方法刻蚀出的Mg拽薄膜图形精确度高,超导转变温度L都在38K以上,临界电流Ic约为l×10^6A/cm^2。

英文摘要:

Effectively patterning of MgBz thin film is a very critical step to the application of superconducting films in superconducting electronics. Two patterning techniques for superconductive MgB2 films by wet etching were presented. In the first technique the precursor boron films were patterned by using H2O2 as etchant. Then the samples were annealed in magnesium vapor in a tantalum crucible, and the patterned boron films were transformed to supercon- ducting MgB2 films. In the second technique the MgBe films were patterned directly by a mixture of hydrofluoric acid (HF) and nitric acid (HNO3) solutions. The patterned Mgg2 films with rather high resolution were fabricated suc- cessfully by using above techniques. critical current density (Ic) is about (T2) of the patterned MgB2 films is around 38K and

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期刊信息
  • 《材料导报:纳米与新材料专辑》
  • 主管单位:重庆西南信息有限公司(原科技部西南信息中心)
  • 主办单位:重庆西南信息有限公司(原科技部西南信息中心)
  • 主编:
  • 地址:重庆市渝北区洪湖西路18号
  • 邮编:401121
  • 邮箱:matreved@163.com
  • 电话:023-67398525
  • 国际标准刊号:ISSN:1005-023X
  • 国内统一刊号:ISSN:50-1078/TB
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:3397