中文摘要：

在常规SiGe工艺下，设计了太赫兹频段的180GHz信号产生、调制与探测电路。正交振荡器产生了四路相位相差90°的正弦信号，每路频率为45GHz，线性叠加之后频率可达到180GHz，开关交叉耦合结构在提高振荡器频率的同时，改善了振荡器的相位噪声；采用控制差分尾管电流的跨导切换式的调制方式，对180GHz信号进行了10MHz的幅度调制，输出功率为-27dBm；探测电路主要为肖特基势垒二极管直接检波电路，实现对已调制的180GHz信号解调。采用IBM180nmSiGeBiCMOS工艺进行流片验证，芯片面积为1000μm×450μm，测试结果表明探测器能够成功解调太赫兹信号。

英文摘要：

The 180 GHz frequency generation, modulation and detection circuit implemented in fundamental SiGe technology were designed. By linear superposition of four paths of 45 GHz signal with phase offsets of 90° which were generated in a quadrature oscillator, 180 GHz signal was generated. Cross coupling of switch structure used in the oscillator ensured higher oscillating frequency and better phase noise performance. The modulation circuit employed method of controlling the trans conductance switching of the differential tail tube current. The 180 GHz signal was amplitude modulated by 10 MHz signal and its output power was about -27 dBm. A detection circuit using Schottky barrier diode demodulated the 180 GHz signal. The test-chips were fabricated in IBM 180 nm SiGe BiCMOS process. The chip area is 1 000 μm×450 μm. The test results show that the detector demodulates the terahertz signal successfully.