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Controlled Growth of Large-Area Aligned Single-Crystalline Organic Nanoribbon Arrays for Transistors and Light-Emitting Diodes Driving
  • 时间:0
  • 分类:TN312.8[电子电信—物理电子学] TN386[电子电信—物理电子学]
  • 作者机构:Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University Suzhou
  • 相关基金:supported by the National Basic Research Program of China (2013CB933500);National Natural Science Foundation of China (Grant Nos. 61422403, 51672180, 51622306, 21673151);Qing Lan Project;Collaborative Innovation Center of Suzhou Nano Science and Technology (NANO-CIC);the Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)
中文摘要:

Organic field-effect transistors(OFETs) based on organic micro-/nanocrystals have been widely reported with charge carrier mobility exceeding 1.0 cm2V-1s-1, demonstrating great potential for high-performance, low-cost organic electronic applications. However, fabrication of large-area organic micro-/nanocrystal arrays with consistent crystal growth direction has posed a significant technical challenge. Here, we describe a solution-processed dip-coating technique to grow large-area, aligned 9,10-bis(phenylethynyl) anthracene(BPEA) and 6,13-bis(triisopropylsilylethynyl) pentacene(TIPSPEN) single-crystalline nanoribbon arrays. The method is scalable to a 5 9 10 cm2 wafer substrate, with around 60% of the wafer surface covered by aligned crystals. The quality of crystals can be easily controlled by tuning the dip-coating speed. Furthermore, OFETs based on well-aligned BPEA and TIPS-PEN single-crystalline nanoribbons were constructed.By optimizing channel lengths and using appropriate metallic electrodes, the BPEA and TIPS-PEN-based OFETs showed hole mobility exceeding 2.0 cm2V-1s-1(average mobility 1.2 cm2V-1s-1) and 3.0 cm2V-1s-1(average mobility2.0 cm2V-1s-1), respectively. They both have a high on/off ratio(Ion/Ioff)>109. The performance can well satisfy the requirements for light-emitting diodes driving.

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