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中文摘要：
本文采用高分子辅助化学溶液沉积（PACSD）的方法，在双轴织构的Ni～5％W合金基底上制备了Sm0．2Ce0．8O1．9-x（SCO）单一缓冲层，并研究了不同退火温度对缓冲层织构和微结构的影响．研究结果表明，通过1100℃退火处理可以得到织构优良、表面致密平整，厚度可达200nm的SCO单一缓冲层．在该缓冲层上用类似的方法沉积的YBCO薄膜的临界超导转变温度Tc0为87K且Jc可达0．5MA·cm-2（在77K时）．可以认为，Sm掺杂CeO2是制备单一缓冲层的一种有效的适合大规模生产的新途径．
英文摘要：
The single Sin-doping CeO2 （Sm0.2Ce0.8O1.9-x） buffer layers for YBCO coated conductors has been de- posited on textured Ni-5 % W substrates by polymer assisted CSD（PACSD） method. Highly textured, dense, pin- bole-free single films have been obtained at 1100℃with the thickness of above 200 nm. The influence of various an- nealing temperature to film orientation and microstructure is investigate in the paper. Subsequently, YBCO thin film has been deposited on Sm-CeO2/NiW by the same method. It has Tc0 = 87 K as well as Jc up to 0.5 MA · cm2 at 77 K. These results indicates that Sm doping may be an cost-effective and scalable approach to fabricate CeO2 Single buffer layer for YBCO Coated Conductors.
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