中文摘要：

用浮区法生长得到了宽禁带半导体材料β-Ga2O3单晶，对其吸收光谱、荧光光谱进行了分析。解释了禁带部分展宽的原因。并研究了Sn^4＋和Ti^4＋的掺杂对其紫外吸收边影响。β-Ga2O3单晶的荧光谱不仅观察到了3个特征峰：紫外光（395nm）、蓝光（471nm）、绿光（559nm），还观察到了在277和297nm的紫外光和692nm的红光荧光发射。

英文摘要：

β-Ga2O3 single crystals, the wide band gap semiconductor, were grown using floating zone technique. Their optical absorption and fluorescence spectra were studied and explained the reason for the part broaden of absorption spectra. The dopants＇ （Sn^4＋ and Ti^4＋ ） affections on UV absorption spectra were also studied. Not only the three characteristic emission bands of β-Ga2O3 single crystal, but the bands peaked at 277,297 and 692nm were observed in luminescence.