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双外延基区4H-SiC BJTs的建模与仿真(英文)
  • 期刊名称：计算物理
  • 时间：0
  • 页码：771-778
  • 语言：中文
  • 相关项目：碳化硅金属-半导体双极型晶体管的研究
作者： 张义门|张倩|张玉明|
同期刊论文项目
碳化硅金属-半导体双极型晶体管的研究
期刊论文 29 会议论文 2 专利 14
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High temperature characterization of double base epilayer 4H-SiC BJTs
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非故意掺杂4H-SiC外延材料本征缺陷的热稳定性
XRD法计算4H-SiC外延单晶中的位错密度
退火对非故意掺杂4H-SiC外延材料386nm和388nm发射峰的影响
4H-SiC中基面位错发光特性研究
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Analytical models for the base transit time of a bipolar transistor with double base epilayers
Effect of Carbonized Conditions on Residual Strain and CrystallinityQuality of Heteroepitaxial Growt
Si衬底上3C-SiC异质外延应力的消除
4H—SiC n—MOSFET新型反型层迁移率模型
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Analytical models for the base transit time of a bipolar transistor with double base epilayers
一种碳化硅外延层质量评估新技术
XRD法计算4H—SiC外延单晶中的位错密度
SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier diodes
双外延基区4H-SiC BJTs的建模与仿真
Characterization of the heteroepitaxial growth of 3C-SiC on Si during low pressure chemical vapor deposition
Fabrication and characterization of 4H-SiC bipolar junction transistor with double base epilayer