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中文摘要：
采用锌铝（2%（质量分数））合金靶，保持真空腔在50℃低温下，结合正交试验表，运用直流反应磁控溅射法制得ZnO∶Al（ZAO）薄膜。通过分光光度计、半导体霍尔效应测试等手段对薄膜各项性能进行了表征。通过正交分析法对所得样品相关特征指标进行分析，在少量的9组实验下，得到溅射功率、时间、靶基距和氧流量百分比4个独立工艺参数对薄膜特性影响的同时，得出直流反应磁控溅射法制备ZAO薄膜的最优组合工艺为：溅射时间20min，靶基距6cm，溅射功率80W，氧流量百分比7%；对应样品的iФc值达4.1050×10^-2/Ω，电阻率为3.9×10^-4Ω·cm，载流子浓度达1.09×10^21/cm^3。
英文摘要：
Based on orthogonal design, Aluminium-doped zinc oxide （ZnO ： Al） films were prepared by D.C. reactive magnetron sputtering on glass substrate from an alloy target （Zn ： Al 2wt%）. The temperature of the sputtering chamber was kept at 50℃. Mathematical statistical method was employed to analyze the experimental results derived from optical and electrical measurements with spectrophotometer and Hall-effect measurement system. Dependences of the films＇ optical-electrical properties on the four main factors such as sputtering time, target-substrate distance, sputtering power, 02 flow rate were investigated respectively. The comprehensive optimal fabrication condition of ZAO films was obtained as well ultimately, that is 20min in sputtering time, 6cm in target-substrate distance, and 80W in sputtering power, 7percent in flow rate; the corresponding film＇s Фic value is 4. 1050×10^-2/Ω, resistivity is 3.9×10^-4Ω·cm and 1.09×10^21/cm^3 of carrier concentration.
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