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Theoretical study of the effects of InAs/GaAs quantum dot layer';s position in i-region on current-v
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2012
  • 页码：081118-
  • 相关项目：新型高效InAs/GaAs量子点中间能带太阳能电池的研究
作者： Yang, Xiao-Guang|Ji, Hai-Ming|Xu, Peng-Fei|Yang, Tao|
同期刊论文项目
新型高效InAs/GaAs量子点中间能带太阳能电池的研究
期刊论文 11 会议论文 15
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