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Epitaxial Growth of Silicon Films on SiO2 Patterned Si(100) Substrates by Atmospheric Pressure Chemi
  • ISSN号：0021-4922
  • 期刊名称：Japanese Journal of Applied Physics
  • 时间：0
  • 页码：-
  • 相关项目：一种用于紫外探测器的新型ZnO基全氧化物透明异质结的制备与性能研究
作者： Duan, Chunyan|Deng, Youjun|Ai, Bin|Liu, Chao|Zhuang, Lin|Shen, Hui|
同期刊论文项目
一种用于紫外探测器的新型ZnO基全氧化物透明异质结的制备与性能研究
期刊论文 9
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