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Research on the Failure Mechanism of High-Power&nbsp;GaAs PCSS<br />
  • ISSN号：0885-8993
  • 期刊名称：IEEE Transactions on Power Electronics
  • 时间：2015
  • 页码：2427-2434
  • 相关项目：光子作用下砷化镓光电导开关沿面闪络机理及其抑制方法研究
作者： Wei Shi, Cheng Ma, and Mengxia Li|
同期刊论文项目
光子作用下砷化镓光电导开关沿面闪络机理及其抑制方法研究
期刊论文 12 会议论文 1 获奖 6
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