中文摘要：

对采用MOCVD方法制备的晶格匹配（LM）与晶格失配（UMM）GaInP/GaInAs/Ge三结太阳电池进行了1MeV电子辐射效应研究。结果表明：在电子辐照下,两种电池的I-V特性参数（开路电压Voc,短路电流Isc,最大输出功率Pmax）均发生衰降,且晶格失配电池的I-V特性参数衰降均大于晶格匹配电池。在光谱响应方面,对于顶电池,晶格匹配电池的衰降大于晶格失配电池;而中间电池则前者衰降小于后者;另外,Ge底电池的光谱响应表现特殊,辐照后光谱响应变强。

英文摘要：

In order to obtain the space solar cells which meanwhile satisfy the requirements of radiation resistance and high efficiency,the research on the radiation effects of solar cells in space is of great significance.1 MeV electron irradiation effects on the lattice matched and upright metamorphic GaInP/GaInAs/Ge triple-junction solar cells were investigated for the fluence range from 5 × 10^14e/cm^2-1.5 × 10^15e/cm^2,and the irradiation flux of 1.0 × 10^11e/（ cm^2·s） was investigated.The damage effects in the solar cells were studied by measuring their electrical properties and spectral response together.It is observed that the electrical parameters（ Voc,Isc,Pmax） of both solar cells degrade seriously,and the degradation of upright metamorphic solar cell is higher than lattice matchedcell.As to the spectral response results,the GaInP top cell of lattice matched solar cell degrades more than upright metamorphic solar cell,but the Ga In As middle cell of lattice matched solar cell degrades less than upright metamorphic solar cell.Besides,the spectral response result of Ge bottom cell shows very special in both solar cells： it becomes stronger after radiation.This is mainly in that the irradiation can produce displacement damage in the crystal lattice,and the irradiation defects as recombination center can decrease the carrier lifetime,diffusion length etc.,and then affect the electrical properties of the solar cells.