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中文摘要：
为了进一步洞悉高分子薄膜自组织机理和高分子有机场效应晶体管（OFET）载流子迁移率之间的直接关联性,本工作采用先进的同步辐射掠入射X射线衍射（GIXRD）技术,研究了高分子OFET中高分子半导体高度区域规则的聚（3-己基噻吩）（RR-P3HT）工作层薄膜,由不同退火温度所导致的薄膜自组织微观结构的变化.GIXRD测试实验结果显示了,对于不同高分子薄膜制备方法（旋涂法及滴膜法）及不同溶液浓度（RR-P3HT溶液浓度为2.5mg/ml及3.5mg/ml）制备的RR-P3HT有机半导体工作层,在氮气气氛下,经过150℃热退火后,形成的噻吩环面垂直于基底,π-π堆积方向平行于衬底二维微晶粒薄片结构较多,微晶粒薄片的晶粒结构较好,有利于载流子的传输.GIXRD测试实验结果也验证了,一个合适的退火处理,将更有利于这个自组织过程中＂edge-on＂的微晶粒薄片结构的形成,结果将导致高分子OFET中场效应迁移率的提高.
英文摘要：
With the aim of understanding the relationships between polymer self-organization and charge carrier mobility of polymer organic field-effect transistor（OFET）,we investigate crystalline microstructure change of annealing-induced selforganization of regioregular poly（3-hexylthiophene）（RR-P3HT） active thin layer in polymer OFET by synchrotron radiation grazing incident X-ray diffraction（GIXRD）.The crystalline microstructures of RR-P3HT thin film with different preparation methods（spin-coating and drop-casting） and different concentrations（2.5 mg /ml and 3.5 mg /ml） at various annealing temperatures are studied.These results present that,the crystalline structures of RR-P3HT active layers annealed at 150 ℃ are better and enhanced to charge transport,which tend to pack form the thiophene rings are perpendicular and the π-π interchain stacking parallel to the substrate.Furthermore,we find that an appropriate annealing temperature can facilitate the crystal structure of edge-on form,resulting in field-effect mobility enhancement of polymer OFET.
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