进 graphene 和它的支持的底层的接口的金属原子的置闰为削弱联合并且构造金属的接口的缘故成为了一个吸引人的话题在惰性的封面下面的原子层。然而,这新奇行为很少在类似的六角形的硼氮化物(h-BN ) 上被报导了在金属底层上综合了。这里,我们描述 Mn 置闰的比较研究进 graphene/Rh (111 ) 和 h-BN/Rh (111 ) 的接口,由使用解决 atomically 的扫描通道显微镜学(STM ) 和密度功能的理论(DFT ) 计算。置闰被退火执行同样扔的 Mn 簇,和进 h-BN/Rh (111 ) 的 Mn 置闰的开始的温度被发现是 80 瑩 ?? 数歡瀠睯牥搠湥楳祴漠 ??? ″坭洯吗?
Intercalation of metal atoms into the interface of graphene and its supporting substrate has become an intriguing topic for the sake of weakening the interface coupling and constructing metal atomic layers under inert covers. However, this novel behavior has rarely been reported on the analogous hexagonal boron nitride (h-BN) synthesized on metal substrates. Here, we describe a comparative study of Mn intercalation into the interfaces of graphene/Rh(111) and h-BN/Rh(111), by using atomically-resolved scanning tunneling microscopy (STM) and density functional theory (DFT) calculations. The intercalation was performed by annealing as-deposited Mn clusters, and the starting temperature of Mn intercalation into h-BN/Rh(111) was found to be ~80 ~C higher than that for graphene/Rh(111). Moreover, the intercalated islands of h-BN/Mn/Rh(111) usually possess more irregular shapes than those of graphene/Mn/Rh(111), as illustrated by temperature-dependent STM observations. All these experimental facts suggest a stronger interaction of Mn with h-BN/Rh(111) than that with graphene/Rh(111).