引入基底表面束缚能、最近邻粒子间的耦合能以及应力场,对粒子扩散势垒进行修正,采用Monte Carlo方法对不同温度下薄膜生长过程进行模拟研究.结果表明,当400 K≤T≤480 K,所得团簇的平均分支宽度基本保持不变,其值近似为单粒子直径.当500 K≤T≤680 K,团簇分支宽度随着温度的升高而逐渐增大至约4个粒子.随着温度的继续升高,由于粒子较高的活跃性而无法凝聚形成大团簇,团簇包含粒子数的平均值小于2.还研究了不同温度下团簇在生长过程中的形貌演化过程以及团簇数变化规律.
Binding energy of substrate, coupling energy of nearest neighbor particles and strain field are introduced to diffusion barrier. Cluster growth process at different temperatures is investigated with Monte Carlo simulation. It shows that as 400 K ≤ T≤ 480 K the average width of ramified clusters is independent on temperature T and is almost equal to the diameter of single particle. As 500 K≤ T≤ 680 K, however, width of the ramified cluster increases gradually to that of 4 particles with increasing temperature. As T increases further, clusters with large number of particles disappear, due to strong activity of particles. Average number of particles in each cluster is smaller than 2. Evolution of cluster morphology during growth process and number of cluster at temperatures are studied as well.