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中文摘要：
采用自助熔融法制备了高质量的In掺杂Bi2Se3（Bi2-xInxSe3）单晶样品。研究了In掺杂对Bi2Se3样品的晶体结构、微观形貌及电输运性能的影响。结果表明：在Bi2-xInxSe3样品中，In基本以替代Bi位的形式存在。随着In掺杂量的增加，样品晶格常数c减小，层状结构更加明显且堆叠层数增多。样品的电阻率随着In掺杂量的增加而明显增大，这可能跟掺杂样品内电离杂质的散射的贡献增大有关。另外，Bi2-xInxSe3样品的磁电阻大小也与In掺杂量呈正相关关系，这是由于在In掺杂的样品中，In掺杂使得样品中声子散射效应增加，导致了体系中的磁电阻值增大。
英文摘要：
Indium-doped Bi2Se3 crystals were fabricated by a self-flux method. The effect of In doping amount on the crystal structure, micro morphology, electrical and magnetic transport properties was investigated. The results show that the In atoms incorporate into tetrad mite structure due to occupying Bi lattice sites. The lattice constant, c, of the sample decreases, the lamellar structure becomes more obvious and the number of stacks increases with the increase of In doping amount. All the samples show a weakly metallic resistivity, and the resistivity increases monotonously as In doping amount increases due to the ccontribution of doping ionized impurity scattering. In addition, the positive correlation between magneto resistance （RM） and In content was analyzed. The behaviour of RM is related to the phonon scattering effect, which enhances the RM value.
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