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A double-stage start-up structure to limit the inrush current used in current mode charge pump
  • ISSN号:1674-4926
  • 期刊名称:《半导体学报:英文版》
  • 时间:0
  • 分类:TN713[电子电信—电路与系统] TM862[电气工程—高电压与绝缘技术]
  • 作者机构:[1]Institute of Electronic CAD, Xidian University, Xi'an 710071, China, [2]Key Laboratory of High-Speed Circuit Design and EMC, Ministry of Education, Xidian University, Xi'an 710071, China
  • 相关基金:supported by the National Natural Science Foundation of China(No.61106026)
中文摘要:

A double-stage start-up structure to limit the inrush current used in current-mode charge pump with wide input range,fixed output and multimode operation is presented in this paper.As a widely utilized power source implement,a Li-battery is always used as the power supply for chips.Due to the internal resistance,a potential drop will be generated at the input terminal of the chip with an input current.A false shut down with a low supply voltage will happen if the input current is too large,leading to the degradation of the Li-battery’s service life.To solve this problem,the inrush current is limited by introducing a new start-up state.All of the circuits have been implemented with the NUVOTON 0.6 μm CMOS process.The measurement results show that the inrush current can be limited below 1 A within all input supply ranges,and the power efficiency is higher than the conventional structure.

英文摘要:

A double-stage start-up structure to limit the inrush current used in current-mode charge pump with wide input range,fixed output and multimode operation is presented in this paper.As a widely utilized power source implement,a Li-battery is always used as the power supply for chips.Due to the internal resistance,a potential drop will be generated at the input terminal of the chip with an input current.A false shut down with a low supply voltage will happen if the input current is too large,leading to the degradation of the Li-battery's service life.To solve this problem,the inrush current is limited by introducing a new start-up state.All of the circuits have been implemented with the NUVOTON 0.6 μm CMOS process.The measurement results show that the inrush current can be limited below 1 A within all input supply ranges,and the power efficiency is higher than the conventional structure.

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期刊信息
  • 《半导体学报:英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编:李树深
  • 地址:北京912信箱
  • 邮编:100083
  • 邮箱:cjs@semi.ac.cn
  • 电话:010-82304277
  • 国际标准刊号:ISSN:1674-4926
  • 国内统一刊号:ISSN:11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
  • 国内外数据库收录:
  • 俄罗斯文摘杂志,美国化学文摘(网络版),荷兰文摘与引文数据库,美国工程索引,美国剑桥科学文摘,英国科学文摘数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊(2004版),中国北大核心期刊(2008版),英国英国皇家化学学会文摘,中国北大核心期刊(2000版)
  • 被引量:7754