中文摘要：

利用离子注入法在一块Si（001）衬底上注入了In＋和As＋,注入能量分别为210keV,150keV,注入剂量6.2×1016cm-2,8.6×1016cm-2,另一块Si（001）衬底上注入Ga＋和Sb＋,注入能量分别为140keV,220keV,注入剂量分别为8.2×1016cm-2,6.2×1016cm-2,然后对样品分别经过一次退火和二次退火处理制备出了Si基量子点材料。用透射电子显微镜（TEM）和高分辨透射电子显微镜（HRTEM）观察了退火后量子点截面像,用PL探测量子点的光致发光谱,发现经二次退火生长的量子点微晶格结构和Si衬底损伤的修复均明显优于一次退火。

英文摘要：

One silica （001） slice was implanted by In＋ and As＋ at 210 keV,150 keV,with does of 6.2×1016 cm-2,8.6×1016cm-2,and the other silica （001） slice was implanted by Ga＋ and Sb＋ at 140 keV and 220 keV with doses of 8.2×1016 cm-2 and 6.2×1016 cm-2,respectively.Then the quantum dots material was fabricated with subsequently once annealing and twice annealing treatment.The implanted subsequent annealed samples were observed using a transmission electron microscope （TEM） and a high resolution transmission electron microscope （HRTEM）.The TEM images show that the crystal lattice of the dots and the repairing of the damaged substrate of the samples which experience the twice anealing are better than that of the samples which experience the once anealing.