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中文摘要：
采用磁控溅射技术先在硅衬底上制备Ga2O3／Ti薄膜，然后在950℃时于流动的氨气中进行氨化反应制备GaN薄膜。X射线衍射（xRD）、傅立叶红外吸收光谱（FTIR）、选区电子衍射（SAED）和高分辨透射电子显微镜（HRTEM）的结果表明采用此方法得到了六方纤锌矿结构的GaN单晶纳米线。通过扫描电镜（SEM）观察发现纳米线的形貌，纳米棒的尺寸在50～150nm之间。
英文摘要：
Ti53.5 Ni22.5Cu23.7 shape memory alloy ribbons have been fabricated by rapid solidification and then the effect of annealing temperature on their microstructures was investigated. The microstructure is very sensitive to the annealing temperature. The plate precipitates with width of 10 to 15nm has coherent relationship with the matrix when annealed at 450℃. When annealed at 500℃, the microstructure is coexistence of nanocrystalline B19 and single-crystalline B19. Ti2 （Ni＋Cu） precipitates were formed when annealing temperature is higher than 550℃. The width of plate Ti2 （Ni＋Cu） precipitates increases from 30 to 50nm to 200 to 300nm with increasing annealing temperature. When annealed at 650℃, the martensite morphology was influenced by the distributions of Ti2 （Ni＋Cu） precipitates and moire fringe can locally be formed due to high density of over lapping irregular structured grain boundaries.
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